吸湿性是大气颗粒物最重要的物理化学性质之一，直接影响着实际大气条件下气溶胶的粒径、形貌、成分、化学反应活性和光学性质，从而最终影响着气溶胶的环境与气候效应。现有的吸湿性测量技术大多需要假设颗粒物为球形，且灵敏度较低，无法准确测定非球形颗粒物或吸湿性较低颗粒物的吸湿性。蒸汽吸附分析仪通过测量颗粒物的质量随相对湿度的变化来研究其吸湿性，这种新方法不仅对颗粒物的形貌没有要求，而且具有卓越的灵敏度。本文首先介绍了这种气溶胶吸湿性测量新方法的工作原理和技术特点，然后重点介绍了这种新方法在大气科学、地球与行星科学、医用气溶胶等多个领域中的应用。最后，在简要总结蒸汽吸附分析仪在大气颗粒物吸湿性研究上的优越性和局限性的基础上，对未来可开展的吸湿性研究工作提出了一些设想。

为合理评估水汽资源，利用大气红外探测仪 (AIRS) 和先进微波探测器 (AMSU) 联合反演的2006―2015年AIRS L2标准反演产品AIRX2RET V006，研究了安徽淮北地区水汽分布和变化特征，重点分析了该地区整层大气可降水量和若干层累积水汽月均值、季均值的年际变化，以及水汽和温度的关系。研究发现：从2006年到2015年这10年间，淮北地区月平均整层大气可降水量呈现逐年减小的趋势。1000～850、850～500和500～100 hPa层累积水汽和整层大气可降水量四季分布一致，呈现夏季 > 秋季 > 春季 > 冬季。四季整层大气可降水量与三层累积水汽年际变化也呈现出较高的一致性，表现为夏季逐年变化相对较大，呈线性减小趋势；秋季次之，除500～100 hPa 层外，在2006至2011年期间呈现逐年线性增大趋势；春、冬两季年际变化相对较小，且无明显的线性关系。

目前，电弧激励器的仿真研究仅局限于得到激励器产生的等离子体的电势、压力、温度和速度等工作特性，而其有关的等离子体状态参数仅限于用光谱诊断其电子温度和电子密度等，二者是分立的，本文试图将其二者统一起来。本文设计了电弧射流等离子体激励器，采用有限元法求解非线性多物理场方程，对此电弧射流等离子体激励器的工作特性进行了数值模拟，得到了激励器内部的电势、压力、温度和速度分布，并在此基础上计算了电子密度，由激励器工况得到了激励器等离子体状态参数（电子温度和电子密度）的仿真计算模型。然后采用发射光谱诊断方法对射流等离子体进行了光谱诊断，利用分立谱线的强度比例法对等离子体电子密度进行计算。结果表明：电弧等离子体激励器诊断实验得到的最高电子温度为10505.8 K，最大电子密度为5.75×10²² m⁻³。对于不同工况下的等离子体电子温度和等离子体密度，实验和仿真结果数值均随入口气体流量增大及放电电流的增大而增大。表明对于所设计的小型化、高射流速度的电弧射流激励器等离子体状态参数的仿真计算模型是合理且适用的。说明将激励器工作特性仿真与光谱诊断的电子温度、密度统一考虑是基本成功的，同时还有值得进一步改进的地方。

设计了一种不对称反射式体全息光栅以实现大角带宽和高衍射效率。讨论了记录角度和衍射效率的关系，获得几组衍射效率较高的记录角度的组合。分析这些组合的角带宽，确定记录角度。采用全息干涉法制备了体全息光栅。实验结果表明：在记录角度是10°和 59°时，角带宽为24°，衍射效率为90%，但峰值波长出现偏移，调整记录角度以改善波长偏移。设计的体全息光栅具有较大角带宽的同时，保持了较高的衍射效率，具有较高的实际应用价值。

With the epidemic of the coronavirus disease (COVID-19) infection, AlGaN-based ultraviolet-C light emitting diodes (UVC-LEDs) have attracted widespread attention for their sterilization application. However, the sterilization characters of high power integrated light sources (ILSs) haven’t been widely investigated before utilizing in public sanitary security. In this work, by integrating up to 195 UVC-LED chips, high power UVC-LED ILSs with a light output power (LOP) of 1.88 W were demonstrated. The UVC-LED ILSs were verified to have efficient and rapid sterilization capability, which have achieved more than 99.9% inactivation rate of several common pathogenic microorganisms within 1 s. In addition, the corresponding air sterilization module based on them was also demonstrated to kill more than 97% of Staphylococcus albus in the air of 20 m³ confined room within 30 min. This work demonstrates excellent sterilization ability of UVC-LED ILSs with high LOP, revealing great potential of UVC-LEDs in sterilization applications in the future.With the epidemic of the coronavirus disease (COVID-19) infection, AlGaN-based ultraviolet-C light emitting diodes (UVC-LEDs) have attracted widespread attention for their sterilization application. However, the sterilization characters of high power integrated light sources (ILSs) haven’t been widely investigated before utilizing in public sanitary security. In this work, by integrating up to 195 UVC-LED chips, high power UVC-LED ILSs with a light output power (LOP) of 1.88 W were demonstrated. The UVC-LED ILSs were verified to have efficient and rapid sterilization capability, which have achieved more than 99.9% inactivation rate of several common pathogenic microorganisms within 1 s. In addition, the corresponding air sterilization module based on them was also demonstrated to kill more than 97% of Staphylococcus albus in the air of 20 m³ confined room within 30 min. This work demonstrates excellent sterilization ability of UVC-LED ILSs with high LOP, revealing great potential of UVC-LEDs in sterilization applications in the future.

In this review, the application of light ion irradiation is discussed for tailoring novel functional materials and for improving the performance in SiC or Si based electrical power devices. The deep traps and electronic disorder produced by light ion irradiation can modify the electrical, magnetic, and optical properties of films (e.g., dilute ferromagnetic semiconductors and topological materials). Additionally, benefiting from the high reproducibility, precise manipulation of functional depth and density of defects, as well as the flexible patternability, the helium or proton ion irradiation has been successfully employed in improving the dynamic performance of SiC and Si based PiN diode power devices by reducing their majority carrier lifetime, although the static performance is sacrificed due to deep level traps. Such a trade-off has been regarded as the key point to compromise the static and dynamic performances of power devices. As a result, herein the light ion irradiation is highlighted in both exploring new physics and optimizing the performance in functional materials and electrical devices.

为了在高超声速飞行器减阻中达到更好的减阻效果，设计了一种电弧射流等离子体激励器。采用有限元法求解非线性多物理方程，对此电弧射流等离子体激励器的工作特性进行了数值模拟，得到了激励器内部的电势、压力、温度和速度分布，综合分析了进气口气体速度、放电电流、激励器管道半径对电势、压力、温度和速度分布的影响。获得了全面的影响规律，通过仿真结果还得到：电弧射流等离子体激励器可产生最高温度为8638 K、最高速度为655 m/s的等离子体射流。当电流20 A，进气速度0.5 m/s，管道半径2.5 mm时，所需功率最小；当电流20 A，入口气体流速5 m/s，管道半径2.5 mm时，出口处平均温度最高；当电流20 A，进口气体速度10 m/s，管道半径2.5 mm时，出口处平均速度最大。并对仿真得到的放电电压进行了实验验证，在等离子体参数相似的情况下，实验结果与仿真结果吻合较好。

In this paper, a new optical analysis method for plasma characterization is proposed. Plasma characteristics are obtained directly by measuring the plasma luminous color, rather than the complex spectral diagnosis method, which is difficult to obtain at high speed. By using the light transmittance curve of the human cornea, the RGB coordinates are calculated from the measured plasma spectrum data. Plasma characteristics are diagnosed using the Boltzmann plot method and the Stark broadening method. The corresponding relationship of the electron temperature, electron density data points, and luminous color is established and analyzed. Our research results indicate that this optical analysis method is feasible and promising for fast plasma characterization.

In this work, based on physical vapor deposition and high-temperature annealing (HTA), the 4-inch crack-free high-quality AlN template is initialized. Benefiting from the crystal recrystallization during the HTA process, the FWHMs of X-ray rocking curves for (002) and (102) planes are encouragingly decreased to 62 and 282 arcsec, respectively. On such an AlN template, an ultra-thin AlN with a thickness of ~700 nm grown by MOCVD shows good quality, thus avoiding the epitaxial lateral overgrowth (ELOG) process in which 3–4 μm AlN is essential to obtain the flat surface and high crystalline quality. The 4-inch scaled wafer provides an avenue to match UVC-LED with the fabrication process of traditional GaN-based blue LED, therefore significantly improving yields and decreasing cost.